Groupe de recherche en physique et technologie des couches minces (GCM)

Deep Reactive Ion Etching (DRIE-ICP)

Description

Deep Reactive Ion Etching – Inductively Coupled Plasma (DRIE-ICP) is a highly anisotropic process to create holes in a wafer or other materials. Its main strength is the high aspect ratio that can be etched, up to 30:1. Our DRIE-ICP features a high plasma density, a low pressure during the process, a high etching rate and a good etching uniformity. The DRIE is extensively used for MEMS manufacturing.

Uses

  • Deep etching

Technical specifications

  Cryo Bosch
Materials etched : Si Si
Masks : PR, SiO2, Cr PR, SiO2, Cr
Gases : SF6, O2 SF6, O2, C4F8
Etching rate : > 2.5 µm/min > 2 µm/min
Selectivity : > 75 :1 for positive resin, > 150 :1 for SiO2, ~infinite for Cr
Uniformity : <±5% on 4 in. wafers N/A
Repeatability : <±4% <±5%
Profile : 90° ± 1° 90° ± 1°
Aspect Ratio : Up to 30 :1 Up to 30 :1
   
Manufacturer : Oxford
Model : Plasmalab System 100 ICP 180