Dopants are elements implanted in semiconductors to modify their electrical, structural or optical properties. Doping with modern techniques such as ionic implantation or solid sources can take a few seconds or several days, depending on the desired concentration, the material, the implanted elements, etc. Generally, the concentrations at stake are in the ppm range. The distribution and the concentration of dopants determine to a great extent the electrical properties of the material.

GCM Lab has powerful accelerators to implant ions in a wide range of materials. GCM Lab also offers advanced doping characterization services, whether to determine the concentration, the distribution profile or the composition of the dopant. Tell us of your expectations, and we will do our best to surpass them!

Fabrication and measurement techniques

• 200 kV implanter, radioactive beam
• 1.7 MV and 6 MV accelerators
• Time-of-flight Secondary Ion Mass Spectroscopy (TOF-SIMS)
• X-ray Photoelectron Spectroscopy (XPS)
• Elastic Recoil Detection (ERD)
• Rutherford Backscattering (RBS)