| Process name | Sample size | Characteristics | Relevant equipment |
|---|---|---|---|
| SiO2 etching | Part 5x5mm to wafer 6 inches |
RIE etching. Gases used : CHF3 + O2. Etching rate: ~ 500A/min, Cr mask 800A, selectivty/Cr ~ infinite, profile ~90° |
Reactive Ion Etching |
| Isotropic Si etching | Part 5x5mm to wafer 4 inches |
DRIE ICP etching. Gases used : SF6. Etching rate ~ 6µm/min. Masks : Cr, SiO2, S1813, SPR220 3.0. Selectivity ~ infinite for all masks. |
Deep Reactive Ion Etching |
| Anisotropic Si etching | Part 5x5mm to wafer 4 inches |
DRIE ICP etching by Bosch process. Gases used: SF6, C4F8, O2. Masks : Cr, S1813, SPR220 3.0 and 7.0. Variable etching rate ~ 1µm/min. Selectivity/Cr ~ infinite, selectivity/resin variable ~1:40. Etching profile ~90°. Possible aspect ratio : 1:30. |
Deep Reactive Ion Etching |
