Groupe de recherche en physique et technologie des couches minces (GCM)

ECR-PECVD

Description

ECR-PECVD stands for Electron Cyclotron Resonance Plasma-Enhanced Chemical Vapor Deposition. The PECVD produces a high density plasma that serves to deposit thin films at a relatively low temperature. The thin film is formed from the plasma gas that becomes solid on contact of the substrate.

Uses

  • Thin film deposition
  • SiO2 deposition for waveguide manufacturing
  • Si3N4 deposition for passivation

Technical specifications

Substrates : Semiconductors, metals, plastics
Sample holder : 4 in diameter
Pumping time : 10 min