Description
This spectroscopic method can analyse semiconductor, organic or inorganic materials. By absorbing a photon, an electron from the valence band moves up to the conduction band. When the electron loses its energy and goes back to the valence band, it emits a photon that can be analysed to determine the band structure, identify impurities or measure the oscillator forces of the material.Uses
- Measure semiconductor impurities
- Analyse the band structure
- Analyse impurities
Technical specifications
| Resolution / sensitivity : | 0.005 nm |
| Lateral resolution : | 1 mm |
| Other characteristics : | Temperature : 4 to 300 K, wavelength range : 400 – 2000 nm in CW PL, time resolution (TRPL) : < 1 ns |
| Manufacturer : | BOMEM |
| Model : | DA-3 |
| Manufacturer : | ISA |
| Model : | U1000 |
| Manufacturer : | ORIEL |
| Model : | MS260i |
| Manufacturer : | PI-Acton |
| Model : | TriVista |
