Description

Plasma enhanced chemical vapor deposition is used to deposit a thin film substrate from a plasma of reactive gases. Plasma is often generated by radio frequency or DC discharge between two electrodes which are located in the reactive gases. It is widely used in the semiconductor industry for depositing metal films onto wafers. Another type of layer often deposited by PECVD is silicon nitride, formed from silane and ammonia or nitrogen.

Uses Film deposition Thin film deposition of silicon nitride and silicon oxide

Technical specifications

Sample holder diameter:	10-20 cm (depending on device)
Temperature of the sample holder :	-20 0C à 600 0C
Available gases:	SiH4, N2, O2, H2, Ar, NH3, HMDSO, TiCl4, CH4, etc
Base pressure:	5 x 10-6 torr