Contacts About GCM Français

Groupe de recherche en physique et technologie des couches minces (GCM)

  • Skip to content
  • Home
  • What’s new?
    • News
    • Newsletter
    • Events
  • Research activities
    • Overview
    • Professors
    • Subsidized projects
    • Graduate courses
    • Students wanted
  • Services to companies
    • Overview
    • Materials analysis
    • Thin film deposition
    • Solutions by application
    • Solutions by industrial sector
    • Our achievements
    • Our customers
    • Publications
    • Contact for industrial customers
  • Services to researchers
    • Overview
    • Materials analysis
    • Microfabrication processes
    • Microfabrication equipment
    • Rates

Reactive Ion Etching (RIE)

Description

Reactive Ion Etching is mainly used to anisotropically etch microelectronic devices. RIE is an easy-to-use method for plasma etching.

Uses

  • Plasma etching (SF6, O2, N2, Ar, He)
  • Surface preparation by plasma
  • Stripping by plasma O2

Technical specifications

Manufacturer : Technics
 

Services to researchers

Overview
Materials analysis
Microfabrication processes
Microfabrication equipment
Mask aligner
Sputtering and e-beam evaporation system
Magnetron sputterer
E-beam evaporator
ECR-PECVD
High power impulse magnetron sputtering (HIPIMS)
Cathodic arc deposition
Dual Ion Beam Sputtering (DIBS)
Plasma Enhanced Chemical Vapour Deposition (PECVD)
Aluminum thermal evaporator
Gold thermal evaporator
Parylene deposition system
Deep Reactive Ion Etching (DRIE-ICP)
Reactive Ion Etching (RIE)
Focused Ion Beam (FIB)
Wet etching - Wet bench
Supercritical drying
Rapid Thermal Annealing (RTA)
UV ozonizing oven
Mass spectrometer
Rates

All right reserved 2008 - 2012 © Thin Film Research Laboratories (GCM)
Web Conception by Géant du Web