Description
This surface analysis technique consists of bombarding the sample surface with a primary ion beam (typically gallium or bismuth) and analyzing the secondary ions ejected by sputtering. By measuring the mass/charge ratio of the secondary ions and their time of flight between the sample and detector, it is possible to determine the elemental composition and the chemical structure of the outer layers of the sample.
 |
Uses
- Surface analysis of organic and inorganic materials
- Identification of surface contaminants
- Surface mapping
- Depth profiling
|
Technical specifications
| Elements detected : |
Hydrogen - uranium, all the isotopes |
| Resolution / sensitivity : |
0.0001 uma, 108 – 1011 at/cm2 (ppb) |
| Depth resolution : |
1 – 3 monolayers |
| Lateral resolution : |
≥ 100 nm |
| Other characteristics : |
Mapping depth profiling, T = -196 – +600 °C |
| |
|
| Manufacturer : |
IONTOF |
| Model : |
TOF-SIMS IV |
