Description

A Ga+ focused ion beam impinges on the sample surface to micromachine it by sputtering the atoms from the surface, according to a given pattern. The beam energy can also be used to selectively deposit materials (platinum or silicon oxide). The detectors can image the exposed surfaces thanks to the emitted ions and secondary electrons.

FIB is very useful to prepare sample for subsequent analysis by microscopy techniques such as SEM, STEM, TEM or EDX. The FIB can also be used for printed circuit modification (conductor cutting, deposit new connections locally) or surface micromachining (photonic crystal fabrication for instance).

Since the instrument also carries an electron microscope mounted at an angle to the ion column, it is possible to visualise the structures or the cut during processing.

Uses Sample cutting Micromachining and imaging on one instrument High resolution imaging Slice preparation for TEM Editing of circuits

Technical specifications

Lateral resolution :	≥ 3 nm (electrons), ≥ 7 nm (ions)
Other characteristics :	Imaging, local deposition (Pt, TEOS), selective etching of oxides
Ion beam :	Gallium
Electron source :	Field emission gun, Schottky type
Manufacturer :	FEI Strata
Model :	DB-235