DEEP REACTIVE ION ETCHING (DRIE-ICP)
Deep Reactive Ion Etching – Inductively Coupled Plasma (DRIE-ICP) is a highly anisotropic process to create tridimensional features in a silicon wafer wafer or other materials. Its main strength is the high aspect ratio that can be reached, up to 30:1. Our DRIE-ICP features a high plasma density, a low pressure during the process, a high etching rate and a good etching uniformity. The DRIE is extensively used for MEMS manufacturing.
Uses
-Deep etching of silicon
Manufacturer : Oxford
Model : Plasmalab System 100 ICP 180
| Process : Cryo | Bosch |
| Materials etched : | Si | Si |
| Masks : | PR, SiO2, Cr | PR, SiO2, Cr |
| Gases : | SF6, O2 | SF6, O2, C4F8 |
| Etching rate : | > 2.5 µm/min | > 2 µm/min |
| Selectivity : | > 75 :1 for positive resin, > 150 :1 for SiO2, ~infinite for Cr | |
| Uniformity : | <±5% on 4 in. wafers | N/A |
| Repeatability : | <±4% | <±5% |
| Profile : | 90° ± 1° | 90° ± 1° |
| Aspect Ratio : | Up to 30 :1 | Up to 30 :1 |
