RAPID THERMAL ANNEALING (RTA)
Rapid Thermal Annealing is a process used in semiconductor manufacturing that consists of heating a wafer to modify its structural properties. Thermal treatments can activate dopants, relax internal stress, diffuse materials to the interface, cristallize an amorphous layer, etc.
Uses
-Activate dopants
-Diffuse materials to the interface
-Relax stress
-Modify the microstructure of thin films (crystallization, densification, defect removal, etc)
Substrates : Semiconductors, metals, inorganic dielectrics
Sample holder : 4 in. diameter
Steady-state temperature range : 400-1150 °C (max 1350 °C)
Steady-state cycling time : 1-300 s
UHP gases for purging : O2, N2, Ar
Temperature stability : +/- 7 °C
Temperature control :
– Above 800 °C : Optical pyrometer
– Below 800 °C : Thermocouple
Heating rate : 220 °C/s (10-300 °C/s)
Cooling rate : < 80 °C/s (depending on temperature)
Non-uniformity of the radiative flux : < + 0.25%
Manufacturer : AG Associates
Model : Heatpulse 410
