REACTIVE ION ETCHING (RIE)
Reactive Ion Etching is mainly used to anisotropically etch complete or structured layers on microelectronic devices. The choice of gazes as well as their pressures and the plasma power allows for controlled etching of materials.
Available gases: SF6, O2, N2, Ar, He, CF4, C4F8, CHF3
Materials: Si, SiO2, SiN, organics (photoresists, parylene …)
Sample size: few mm up to full 200 mm wafer
Plasma type: RF
Plasma power: 300W (max)