Photolithography processes

Process name Characteristics Uses Relevant equipment
S1813 Fine positive resin.
Thickness range : 1.48 to 2.9µm.
Thickness and uniformity
at 4000 rpm/min : 1.54 +/- 0.01µm.
Temperature of use: 115°C .
Possible resolution : 0.8µm.
Sample size: 5x5 mm to wafer 100 mm.
Wet and dry etching Mask aligner MA4, SOLVENT FUME
LOR 5A + S1813 Lift off resin.
Thickness range : 450 to 950nm.
Temperature of use: 150 to 190°C.
Possible resolution : 1.5µm.
Sample size: 5x5 mm to wafer 100 mm.
Lift off for depositions < 950nm Mask aligner MA4, SOLVENT FUME
LOR1A + S1813 Lift off resin.
Thickness range: 100 to 200nm.
Temperature of use : 150 to 190°C.
Possible resolution : 1µm.
Sample size : 5x5 mm to wafer 100 mm.
Lift off for depositions < 200nm Mask aligner MA4, SOLVENT FUME
AZ5214EIR Reversible image resin.
Thickness range : 1.14 to 1.98µm.
Temperature of use : ~ 120°C.
Possible resolution: 1µm.
Sample size: 5x5 mm to wafer 100 mm.
Wet etching, lift off,
flexible masks
Mask aligner MA4, SOLVENT FUME
SPR220 7.0 Positive thick resin.
Thickness range : 5.5 to > 50µm.
Temperature of use : ~ 115°C.
Possible resolution : 2.5µm.
Sample size: 5x5 mm to wafer 100 mm.
Wet etching, dry etching,
litho on major topology
Mask aligner MA4, SOLVENT FUME
SPR220 3.0 Positive resin, intermediate thickness.
Thickness range : 2.5 to 4.5 µm.
Temperature of use : ~ 115°C.
Possible resolution: 1µm.
Sample size: 5x5 mm to wafer 100 mm
Wet etching, dry etching,
litho on average topology
Mask aligner MA4, SOLVENT FUME
SU8 50 Negative thick resin.
Thickness range : 15 to 40µm.
Temperature of use : ~ 95°C.
Possible resolution : 10µm.
Sample size: wafer 100 mm.
PDMS moulds Mask aligner MA4, SOLVENT FUME
SU8 2015 Negative thick resin.
Thickness range : 15 to 40µm.
Temperature of use : ~ 95°C.
Possible resolution : 10µm.
Sample size: wafer 100 mm.
PDMS moulds Mask aligner MA4, SOLVENT FUME