Description
Rapid Thermal Annealing is a process used in semiconductor manufacturing that consists of heating a wafer to modify its structural properties. Thermal treatments can activate dopants, relax internal stress, diffuse materials to the interface, cristallize an amorphous layer, etc. The Heatpulse 410 is a computer-controlled oven to make rapid annealing on samples. Two rows of lamps, one on the plate and the other one above it, supply the energy necessary to heat the sample. The oven walls are covered with a reflective coating that reduces thermal loss and improves the uniformity of the temperature during annealing.
 |
Uses
- Activate dopants
- Diffuse materials to the interface
- Relax stress
- Modify the microstructure of thin films (crystallization, densification, defect removal, etc)
|
Technical specifications
| Substrates : |
Semiconductors, metals, inorganic dielectrics |
| Sample holder : |
4 in. diameter |
| Steady-state temperature range : |
400-1150 °C (max 1350 °C) |
| Steady-state cycling time : |
1-300 s |
| UHP gases for purging : |
O2, N2, Ar |
| Temperature stability : |
+ 7 °C |
| Temperature control : |
|
| - Above 800 °C : |
Optical pyrometer |
| - Below 800 °C : |
Thermocouple |
| Heating rate : |
220 °C/s (between 10-300 °C/s) |
| Cooling rate : |
< 80 °C/s (depending on temperature) |
| Non-uniformity of the radiative flux : |
< + 0.25% |
| |
|
| Manufacturer : |
AG Associates |
| Model : |
Heatpulse 410 |
