Description
In RBS, a light ion beam (H, He, Li, etc.) of typical energies 1-3 MeV collides with the sample. The ions are backscattered from a region near the sample surface and are collected by a solid state detector. The backscattered ion energy distribution gives information on the composition and the depth distribution of the sample elements. The thickness and composition of the sample layers are deducted by comparing the experimental data with simulations. RBS is a quantitative and non-destructive method, ideal for depth profiling.
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Uses
- Thin film composition
- Depth profiling
- Determine atomic concentrations in atomic %
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Technical specifications
| Elements detected : |
Carbon - uranium |
| Resolution / sensitivity : |
0.001 - 10 at% |
| Depth resolution : |
3 nm |
| Depth resolution : |
2 mm |
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| Model : |
Tandetron 1.7 MV and Tandem 6 MV accelerators |
