Description
This system is specifically dedicated to thin film deposition (1 nm to a few microns thick). It features a vacuum chamber containing an electron-beam evaporation source (six crucibles) and three 4-inch diameter targets for magnetron sputtering. A hopper is used to put the samples in the deposition chamber. This apparatus can deposit high quality films with good control of the thickness and a high uniformity. |
Uses
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Technical specifications
General| Substrates : | Semiconductors, metals, plastics |
| Sample holder : | 4 in. diameter |
| Pumping time : | 10 min |
| Base pressure : | 1x10-7 torr |
| Sample holder temperature : | up to 200 °C |
| Option for plasma pre-treatment of the sample surface
Evaporation |
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| Number of crucibles : | 6 |
| Volume of crucibles : | 15 cm3 |
| Crucible – sample holder distance : | 18 in |
| Thickness control : | <1% error |
| Max non-uniformity on thickness : | 1% for a 4 in. wafer |
| Deposition rate : | 0.5 - 3 Angströms / s |
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Sputtering |
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| Number of targets : | 3 targets |
| Target dimensions : | 4 in. diameter |
| Precision on thickness : | 5% |
| Crucible – sample holder distance : | 5 in |
| Gases available : | Ar, N2, O2 |
| Option for codeposition of alloys from two targets | |
| Manufacturer : | Homemade |
| Model : | Homemade |