| Process name | Sample size | Sample size | Relevant equipment |
|---|---|---|---|
| SiO2 etching | Part 5x5mm to wafer 4 inches |
Etching BOE (7V NH4F 40% + 1V HF49%). Etching rate SiO2th ~ 750A/min. Mask : S1813, SPR220 7.0 |
N/A |
| Anisotropic crystalline Si etching | Part 5x5mm to wafer 4 inches |
Etching TMAH 25%. Temperature of use : 90°C. Etching rate : 0,670µm/min of the 100 plane. Mask : SiO2th. Etching rate SiO2th ~ 1,2A/min |
N/A |
